2SB892 / 2sd1207 no.930-1/5 applications power supplies, relay drivers, lamp drivers, and automotive wiring. features fbet and mbit processed (original process of sanyo). low saturation voltage. large current capacity and wide aso. specifications ( ) : 2SB892 absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)60 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)2 a collector current (pulse) i cp (--)4 a collector dissipation p c 1w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)50v, i e =0a (--)0.1 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)0.1 a continued on next page. www.semiconductor-sanyo.com/network ordering number : en930d d0308ea ms im tc-00001739 / 10904tn (kt)/91098ha (kt)/4067ki/3145ki specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ? s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ? s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. sanyo semiconductors data sheet 2SB892 / 2sd1207 pnp / npn epitaxial planar silicon transistors large-current switching applications
2SB892 / 2sd1207 no.930-2/5 continued from preceding page. ratings parameter symbol conditions min typ max unit dc current gain h fe 1* v ce =(--)2v, i c =(--)100ma 100 560 h fe 2v ce =(--)2v, i c =(--)1.5a 40 gain-bandwidth product f t v ce =(--)10v, i c =(--)50ma 150 mhz output capacitance cob v cb =(--)10v, f=1mhz (22)12 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)1a, i b =(--)50ma (--0.3)0.15 (--0.7)0.4 v base-to-emitter saturation voltage v be (sat) i c =(--)1a, i b =(--)50ma (--)0.9 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--)60 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v * : the 2SB892 / 2sd1207 are graded as follows by h fe at 100ma : rank r s t u h fe 100 to 200 140 to 280 200 to 400 280 to 560 package dimensions unit : mm (typ) 7520-002 123 0.5 0.5 0.5 0.6 1.45 1.45 6.0 4.7 5.0 3.0 1.0 8.5 14.0 1 : emitter 2 : collector 3 : base sanyo : mp i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a -- 2 . 4 -- 2 . 0 -- 1 . 6 -- 0 . 8 -- 1 . 2 -- 0 . 4 0 0 --2.4 --1.6 --2.0 -- 1 . 2 --0.4 --0.8 2.4 2.0 1.6 0.8 1.2 0.4 0 02.4 1.6 2.0 1.2 0.4 0.8 --2ma --4ma --6ma --8ma --50ma 2ma 4ma 8ma 50ma 40ma 25ma 15ma --20ma --10ma i b =0 ma itr08646 i b =0 ma itr08647 2SB892 2sd1207
2SB892 / 2sd1207 no.930-3/5 h fe -- i c collector current, i c -- ma dc current gain, h fe i c -- v be i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- ma base-to-emitter voltage, v be -- v collector current, i c -- ma h fe -- i c collector current, i c -- ma dc current gain, h fe collector current, i c -- ma f t -- i c gain-bandwidth product, f t -- mhz collector current, i c -- ma f t -- i c gain-bandwidth product, f t -- mhz i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- ma collector-to-emitter voltage, v ce -- v collector current, i c -- ma 2SB892 v ce = --2v itr08652 100 1000 5 7 3 2 5 7 3 2 10 --100 7 3 25 7 3 25 3 25 --1000 --10 2sd1207 v ce =2v 100 1000 5 7 3 2 5 7 3 2 10 100 7 3 25 7 3 25 3 25 1000 10 itr08653 2SB892 v cb = --10v 10 100 7 5 3 2 7 5 3 2 1000 --100 --10 25 37 2 5 323 7 --1000 2sd1207 v cb =10v 100 10 25 37 2 5 323 7 1000 itr08654 10 100 7 5 3 2 7 5 3 2 1000 itr08655 0 0.4 0.2 1.2 0.8 1.0 0.6 --2ma --1ma --3ma --4ma --5ma --6ma --7ma --1200 --1000 --400 --800 --600 --200 0 0 --12 --8 --10 -- 6 -- 2 -- 4 7ma 6ma 5ma 4ma 3ma 2ma 1ma 1200 1000 400 800 600 200 0 --1200 --1000 --400 --800 --600 --200 0 1200 1000 400 800 600 200 0 012 810 6 24 i b =0 ma itr08648 2SB892 2sd1207 i b =0 ma itr08649 2sd1207 v ce =2v itr08651 0 --0.4 --1.2 --0.8 --1.0 --0.2 --0.6 2SB892 v ce = --2v itr08650
2SB892 / 2sd1207 no.930-4/5 p c -- ta ambient temperature, ta -- c collector dissipation, p c -- mw a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a v ce (sat) -- i c collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- v collector-to-emitter saturation voltage, v ce (sat) -- v v ce (sat) -- i c collector current, i c -- ma cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v 0.1 2 5 5 3 2 5 3 1.0 2 5 3 10 0.01 1.0 5 37 5 37 2 5 37 2 10 100 i cp =4a 10ms 100ms dc operation 1ms i c =2a itr08661 0 1200 600 400 1000 800 200 20 060 40 80 100 140 120 160 itr08660 2SB892 / 2sd1207 2SB892 / 2sd1207 (for pnp minus sign is omitted.) --100 7 23 5 7 23 23 5 --1000 --10 100 7 23 5 7 23 23 5 1000 10 --100 --10 --1.0 --0.01 --0.1 5 2 5 2 5 2 5 2 itr08658 2SB892 i c / i b =20 100 10 1.0 0.01 0.1 5 2 5 2 5 2 5 2 itr08659 2sd1207 i c / i b =20 3 2 7 5 7 5 10 100 37 2 1.0 10 537 2 100 5 itr08657 2sd1207 f=1mhz 3 2 2 7 5 7 5 10 100 37 2 --1.0 --10 537 2 --100 5 itr08656 2SB892 f=1mhz
2SB892 / 2sd1207 no.930-5/5 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party?s intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. this catalog provides information as of december, 2008. specifications and information herein are subject to change without notice. ps
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